WNSC2M150120W6Q WeEn Semiconductors
Hersteller: WeEn Semiconductors
SiC MOSFETs WNSC2M150120W/SOT429/STANDARD MARKING * HORIZONTAL, RAIL PACK
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Technische Details WNSC2M150120W6Q WeEn Semiconductors
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16.5A; Idm: 46A; 153W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 16.5A, Pulsed drain current: 46A, Power dissipation: 153W, Case: TO247-3, Gate-source voltage: -4...18V, On-state resistance: 233mΩ, Mounting: THT, Gate charge: 40nC, Kind of package: tube, Kind of channel: enhancement.
Weitere Produktangebote WNSC2M150120W6Q
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| WNSC2M150120W6Q | WeEn Semiconductors |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16.5A; Idm: 46A; 153W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 16.5A Pulsed drain current: 46A Power dissipation: 153W Case: TO247-3 Gate-source voltage: -4...18V On-state resistance: 233mΩ Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 600 Stücke Im Einkaufswagen Stück im Wert von UAH |
| WNSC2M150120W6Q |
|
Hersteller: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16.5A; Idm: 46A; 153W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 16.5A
Pulsed drain current: 46A
Power dissipation: 153W
Case: TO247-3
Gate-source voltage: -4...18V
On-state resistance: 233mΩ
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16.5A; Idm: 46A; 153W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 16.5A
Pulsed drain current: 46A
Power dissipation: 153W
Case: TO247-3
Gate-source voltage: -4...18V
On-state resistance: 233mΩ
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 600 Stücke
Im Einkaufswagen
Stück im Wert von UAH