WNSC2M40120B76J WeEn Semiconductors
Hersteller: WeEn Semiconductors
SiC MOSFETs WNSC2M40120B7/TO263-7L/REEL 13" Q1/T1 *STANDARD MARK SMD
Produktrezensionen
Produktbewertung abgeben
Technische Details WNSC2M40120B76J WeEn Semiconductors
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 61A; Idm: 170A; 500W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 61A, Pulsed drain current: 170A, Power dissipation: 500W, Case: TO263-7, Gate-source voltage: -4...18V, On-state resistance: 56mΩ, Mounting: SMD, Gate charge: 115nC, Kind of package: reel; tape, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal.
Weitere Produktangebote WNSC2M40120B76J
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| WNSC2M40120B76J | WeEn Semiconductors |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 61A; Idm: 170A; 500W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 61A Pulsed drain current: 170A Power dissipation: 500W Case: TO263-7 Gate-source voltage: -4...18V On-state resistance: 56mΩ Mounting: SMD Gate charge: 115nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| WNSC2M40120B76J |
|
Hersteller: WeEn Semiconductors
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 61A; Idm: 170A; 500W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 61A
Pulsed drain current: 170A
Power dissipation: 500W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 61A; Idm: 170A; 500W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 61A
Pulsed drain current: 170A
Power dissipation: 500W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH