WNSC2M75120W6Q WeEn Semiconductors
Hersteller: WeEn Semiconductors
SiC MOSFETs WNSC2M75120W/SOT429/STANDARD MARKING * HORIZONTAL, RAIL PACK
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Technische Details WNSC2M75120W6Q WeEn Semiconductors
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30.3A; Idm: 80A; 231W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 30.3A, Pulsed drain current: 80A, Power dissipation: 231W, Case: TO247-3, Gate-source voltage: -4...18V, On-state resistance: 0.105Ω, Mounting: THT, Gate charge: 62nC, Kind of package: tube, Kind of channel: enhancement.
Weitere Produktangebote WNSC2M75120W6Q
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| WNSC2M75120W6Q | WeEn Semiconductors |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30.3A; Idm: 80A; 231W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 30.3A Pulsed drain current: 80A Power dissipation: 231W Case: TO247-3 Gate-source voltage: -4...18V On-state resistance: 0.105Ω Mounting: THT Gate charge: 62nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 600 Stücke Im Einkaufswagen Stück im Wert von UAH |
| WNSC2M75120W6Q |
|
Hersteller: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30.3A; Idm: 80A; 231W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30.3A
Pulsed drain current: 80A
Power dissipation: 231W
Case: TO247-3
Gate-source voltage: -4...18V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30.3A; Idm: 80A; 231W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30.3A
Pulsed drain current: 80A
Power dissipation: 231W
Case: TO247-3
Gate-source voltage: -4...18V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 600 Stücke
Im Einkaufswagen
Stück im Wert von UAH