WNSCM80120RQ WeEn Semiconductors
Hersteller: WeEn Semiconductors
Description: WNSCM80120R/TO247-4L/STANDARD MA
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 4.5V @ 6mA
Power Dissipation (Max): 270W (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Bulk
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Technische Details WNSCM80120RQ WeEn Semiconductors
Description: WNSCM80120R/TO247-4L/STANDARD MA, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 20 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +25V, -10V, Drive Voltage (Max Rds On, Min Rds On): 20V, Supplier Device Package: TO-247-4L, Vgs(th) (Max) @ Id: 4.5V @ 6mA, Power Dissipation (Max): 270W (Ta), Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V, Current - Continuous Drain (Id) @ 25°C: 45A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Bulk.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| WNSCM80120RQ | Hersteller : WeEn Semiconductors |
MOSFETs WNSCM80120R/TO247-4L/STANDARD MARKING * HORIZONTAL, RAIL PACK |
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