WSJM65R099DTLJ WeEn Semiconductors
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Technische Details WSJM65R099DTLJ WeEn Semiconductors
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 100A; 147W; TOLL; ESD, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 16A, Pulsed drain current: 100A, Power dissipation: 147W, Case: TOLL, Gate-source voltage: ±30V, On-state resistance: 99mΩ, Mounting: SMD, Gate charge: 57nC, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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| WSJM65R099DTLJ | Hersteller : WeEn Semiconductors |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 100A; 147W; TOLL; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 16A Pulsed drain current: 100A Power dissipation: 147W Case: TOLL Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
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