XP0431100L

XP0431100L Panasonic Electronic Components


XP04311_Rev_Nov_2011.pdf Hersteller: Panasonic Electronic Components
Description: TRANS PREBIAS NPN/PNP SMINI6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Frequency - Transition: 150MHz, 80MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SMINI6-G1
auf Bestellung 1791 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
30+0.6 EUR
45+ 0.4 EUR
100+ 0.29 EUR
500+ 0.24 EUR
1000+ 0.23 EUR
Mindestbestellmenge: 30
Produktrezensionen
Produktbewertung abgeben

Technische Details XP0431100L Panasonic Electronic Components

Description: TRANS PREBIAS NPN/PNP SMINI6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 150mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V, Frequency - Transition: 150MHz, 80MHz, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 10kOhms, Supplier Device Package: SMINI6-G1.

Weitere Produktangebote XP0431100L

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
XP0431100L XP04311_Rev_Nov_2011.pdf
auf Bestellung 21490 Stücke:
Lieferzeit 21-28 Tag (e)
XP0431100L XP0431100L Hersteller : Panasonic Electronic Components XP04311_Rev_Nov_2011.pdf Description: TRANS PREBIAS NPN/PNP SMINI6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Frequency - Transition: 150MHz, 80MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SMINI6-G1
Produkt ist nicht verfügbar