| Anzahl | Preis |
|---|---|
| 2+ | 2.04 EUR |
| 10+ | 1.69 EUR |
| 100+ | 1.32 EUR |
| 500+ | 1.12 EUR |
| 1000+ | 0.91 EUR |
| 3000+ | 0.86 EUR |
| 6000+ | 0.81 EUR |
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Technische Details XP10A250YT XSemi
Description: MOSFET 2N-CH 100V 2.1A PMPAK, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.5W (Ta), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 50V, Rds On (Max) @ Id, Vgs: 250mOhm @ 2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-PMPAK (3x3).
Weitere Produktangebote XP10A250YT nach Preis ab 0.83 EUR bis 3.13 EUR
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XP10A250YT | YAGEO XSemi |
MOSFETs Dual N Channe l 100V 2.1A PMPAK-3x |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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XP10A250YT | YAGEO XSEMI |
Description: MOSFET 2N-CH 100V 2.1A PMPAKPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 50V Rds On (Max) @ Id, Vgs: 250mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PMPAK (3x3) |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| XP10A250YT |
![]() |
Hersteller: YAGEO XSemi
MOSFETs Dual N Channe l 100V 2.1A PMPAK-3x
MOSFETs Dual N Channe l 100V 2.1A PMPAK-3x
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 2.64 EUR |
| 10+ | 1.83 EUR |
| 100+ | 1.25 EUR |
| 500+ | 1 EUR |
| 1000+ | 0.92 EUR |
| 3000+ | 0.87 EUR |
| 6000+ | 0.83 EUR |
| XP10A250YT |
![]() |
Hersteller: YAGEO XSEMI
Description: MOSFET 2N-CH 100V 2.1A PMPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 50V
Rds On (Max) @ Id, Vgs: 250mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PMPAK (3x3)
Description: MOSFET 2N-CH 100V 2.1A PMPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 50V
Rds On (Max) @ Id, Vgs: 250mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PMPAK (3x3)
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.13 EUR |
| 10+ | 1.99 EUR |
| 100+ | 1.34 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 0.97 EUR |


