auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.31 EUR |
| 10+ | 2.75 EUR |
| 100+ | 2.2 EUR |
| 250+ | 2.01 EUR |
| 500+ | 1.83 EUR |
| 1000+ | 1.58 EUR |
| 3000+ | 1.5 EUR |
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Technische Details XP1504YT XSemi
Description: MOSFET N-CH -20V -2.5A SOT-23S, Packaging: Tape & Reel (TR), Package / Case: 8-PowerDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 15.8A (Tc), Rds On (Max) @ Id, Vgs: 59mOhm @ 9A, 10V, Power Dissipation (Max): 3.12W (Ta), 31.2W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PMPAK® 3 x 3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 25.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 984 pF @ 100 V.
Weitere Produktangebote XP1504YT nach Preis ab 1.5 EUR bis 3.38 EUR
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XP1504YT | Hersteller : YAGEO XSemi |
 MOSFET N-CH 150V 5A PMPAK-3x3 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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XP1504YT | Hersteller : XSemi Corporation |
Description: MOSFET N-CH -20V -2.5A SOT-23S Packaging: Cut Tape (CT) Package / Case: 8-PowerDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 15.8A (Tc) Rds On (Max) @ Id, Vgs: 59mOhm @ 9A, 10V Power Dissipation (Max): 3.12W (Ta), 31.2W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PMPAK® 3 x 3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 25.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 984 pF @ 100 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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XP1504YT | Hersteller : XSemi Corporation |
Description: MOSFET N-CH -20V -2.5A SOT-23S Packaging: Tape & Reel (TR) Package / Case: 8-PowerDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 15.8A (Tc) Rds On (Max) @ Id, Vgs: 59mOhm @ 9A, 10V Power Dissipation (Max): 3.12W (Ta), 31.2W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PMPAK® 3 x 3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 25.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 984 pF @ 100 V |
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