XP161A1265PR-G Torex Semiconductor
| Anzahl | Preis |
|---|---|
| 2+ | 1.88 EUR |
| 10+ | 1.17 EUR |
| 100+ | 0.77 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.49 EUR |
| 2000+ | 0.43 EUR |
| 5000+ | 0.42 EUR |
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Technische Details XP161A1265PR-G Torex Semiconductor
Description: MOSFET N-CH 20V 4A SOT89, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: 150°C (TA), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 4.5V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 1.4V @ 1mA, Supplier Device Package: SOT-89, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 10 V.
Weitere Produktangebote XP161A1265PR-G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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XP161A1265PR-G | Hersteller : Torex Semiconductor Ltd |
Description: MOSFET N-CH 20V 4A SOT89Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: 150°C (TA) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 1mA Supplier Device Package: SOT-89 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 10 V |
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