Technische Details XP161A1265PR TOREX
Description: MOSFET N-CH 20V 4A SOT89, Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Supplier Device Package: SOT-89, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-243AA, Packaging: Tape & Reel (TR).
Weitere Produktangebote XP161A1265PR
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XP161A1265PR | Hersteller : Torex Semiconductor Ltd |
 Description: MOSFET N-CH 20V 4A SOT89Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: SOT-89 Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Tape & Reel (TR) |
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