XP264N0301TR-G Torex Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.7 EUR |
| 10+ | 0.44 EUR |
| 100+ | 0.29 EUR |
| 1000+ | 0.15 EUR |
| 3000+ | 0.099 EUR |
| 9000+ | 0.082 EUR |
| 24000+ | 0.077 EUR |
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Technische Details XP264N0301TR-G Torex Semiconductor
Description: MOSFET N-CH 60V 300MA SOT23, Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Power Dissipation (Max): 400mW (Ta), Rds On (Max) @ Id, Vgs: 1.6Ohm @ 100mA, 10V, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote XP264N0301TR-G
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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XP264N0301TR-G | Torex Semiconductor Ltd |
Description: MOSFET N-CH 60V 300MA SOT23Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 400mW (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 100mA, 10V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
XP264N0301TR-G | Torex Semiconductor Ltd |
Description: MOSFET N-CH 60V 300MA SOT23Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 400mW (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 100mA, 10V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| XP264N0301TR-G |
![]() |
Hersteller: Torex Semiconductor Ltd
Description: MOSFET N-CH 60V 300MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 400mW (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 300MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 400mW (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| XP264N0301TR-G |
![]() |
Hersteller: Torex Semiconductor Ltd
Description: MOSFET N-CH 60V 300MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 400mW (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 300MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 400mW (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



