| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.19 EUR |
| 10+ | 0.74 EUR |
| 100+ | 0.48 EUR |
| 500+ | 0.36 EUR |
| 1000+ | 0.32 EUR |
| 3000+ | 0.26 EUR |
| 6000+ | 0.25 EUR |
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Technische Details XP3700MT YAGEO XSemi
Description: MOSFET N/P-CH 30V 11A PMPAK, Packaging: Tape & Reel (TR), Package / Case: 8-PowerLDFN, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.57W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 7.3A(Ta), Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V, 960pF @ 15V, Rds On (Max) @ Id, Vgs: 18mOhm @ 11A, 10V, 45mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V, 9.6nC @ 4.5V, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PMPAK® 5 x 6.
Weitere Produktangebote XP3700MT nach Preis ab 1.02 EUR bis 2.62 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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XP3700MT | YAGEO XSEMI |
 Description: MOSFET N/P-CH 30V 11A PMPAKPackaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.57W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 7.3A(Ta) Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V, 960pF @ 15V Rds On (Max) @ Id, Vgs: 18mOhm @ 11A, 10V, 45mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V, 9.6nC @ 4.5V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PMPAK® 5 x 6 |
auf Bestellung 410 Stücke: Lieferzeit 10-14 Tag (e) |
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XP3700MT | XSemi |
MOSFET Complementary N ch + P ch 30V/-30 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| XP3700MT |
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Hersteller: YAGEO XSEMI
Description: MOSFET N/P-CH 30V 11A PMPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.57W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 7.3A(Ta)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V, 960pF @ 15V
Rds On (Max) @ Id, Vgs: 18mOhm @ 11A, 10V, 45mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V, 9.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Description: MOSFET N/P-CH 30V 11A PMPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.57W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 7.3A(Ta)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V, 960pF @ 15V
Rds On (Max) @ Id, Vgs: 18mOhm @ 11A, 10V, 45mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V, 9.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
auf Bestellung 410 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.59 EUR |
| 13+ | 1.63 EUR |
| 100+ | 1.08 EUR |
| XP3700MT |
|
Hersteller: XSemi
MOSFET Complementary N ch + P ch 30V/-30
MOSFET Complementary N ch + P ch 30V/-30
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.62 EUR |
| 10+ | 2.14 EUR |
| 100+ | 1.67 EUR |
| 500+ | 1.42 EUR |
| 1000+ | 1.2 EUR |
| 3000+ | 1.02 EUR |