| Anzahl | Preis |
|---|---|
| 2+ | 2.69 EUR |
| 10+ | 1.72 EUR |
| 100+ | 1.15 EUR |
| 500+ | 0.91 EUR |
| 1000+ | 0.85 EUR |
| 3000+ | 0.77 EUR |
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Technische Details XP4NA1R4CMT-A YAGEO XSemi
Description: MOSFET N-CH 45V 49A 223A PMPAK, Packaging: Tape & Reel (TR), Package / Case: 8-PowerLDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 223A (Tc), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V, Power Dissipation (Max): 5W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PMPAK® 5 x 6, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 45 V, Gate Charge (Qg) (Max) @ Vgs: 75.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V.
Weitere Produktangebote XP4NA1R4CMT-A nach Preis ab 1.3 EUR bis 3.47 EUR
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XP4NA1R4CMT-A | YAGEO XSEMI |
 Description: MOSFET N-CH 45V 49A 223A PMPAKPackaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 223A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PMPAK® 5 x 6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 75.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| XP4NA1R4CMT-A |
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Hersteller: YAGEO XSEMI
Description: MOSFET N-CH 45V 49A 223A PMPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 223A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 75.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V
Description: MOSFET N-CH 45V 49A 223A PMPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 223A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 75.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.47 EUR |
| 10+ | 2.44 EUR |
| 100+ | 1.7 EUR |
| 500+ | 1.41 EUR |
| 1000+ | 1.3 EUR |