XP6NA1R7CMT YAGEO XSEMI

Description: FET N-CH 60V 41.6A 190A PMPAK, Packaging: Tape & Reel (TR), Package / Case: 8-PowerLDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41.6A (Ta), 190A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V, Power Dissipation (Max): 5W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PMPAK® 5 x 6, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V.