| Anzahl | Preis |
|---|---|
| 1+ | 13.8 EUR |
| 10+ | 11.81 EUR |
| 25+ | 10.72 EUR |
| 100+ | 9.86 EUR |
| 250+ | 9.26 EUR |
| 500+ | 8.69 EUR |
| 1000+ | 7.83 EUR |
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Technische Details XP6NA2R4IT YAGEO XSemi
Description: MOSFET N-CH 60V 93A TO220CFM, Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 192 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220CFM, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 1.92W (Ta), 34.7W (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 40A, 10V, Current - Continuous Drain (Id) @ 25°C: 93A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Weitere Produktangebote XP6NA2R4IT nach Preis ab 7.88 EUR bis 13.89 EUR
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XP6NA2R4IT | YAGEO XSEMI |
 Description: MOSFET N-CH 60V 93A TO220CFMInput Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 192 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220CFM Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1.92W (Ta), 34.7W (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 93A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| XP6NA2R4IT |
|
Hersteller: YAGEO XSEMI
Description: MOSFET N-CH 60V 93A TO220CFM
Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 192 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220CFM
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.92W (Ta), 34.7W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 60V 93A TO220CFM
Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 192 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220CFM
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.92W (Ta), 34.7W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 13.89 EUR |
| 50+ | 11.1 EUR |
| 100+ | 9.93 EUR |
| 500+ | 8.76 EUR |
| 1000+ | 7.88 EUR |