auf Bestellung 915 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.56 EUR |
| 10+ | 3.78 EUR |
| 100+ | 3.01 EUR |
| 250+ | 2.78 EUR |
| 500+ | 2.52 EUR |
| 1000+ | 2.16 EUR |
| 2000+ | 2.04 EUR |
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Technische Details XP9561GI YAGEO XSemi
Description: MOSFET P-CH 40V 36A TO220CFM, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V, Power Dissipation (Max): 33.7W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-220CFM, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V.
Weitere Produktangebote XP9561GI nach Preis ab 2.57 EUR bis 4.59 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| XP9561GI | Hersteller : YAGEO XSEMI |
 Description: MOSFET P-CH 40V 36A TO220CFMPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V Power Dissipation (Max): 33.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220CFM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V |
auf Bestellung 956 Stücke: Lieferzeit 10-14 Tag (e) |
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