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XPH3R908QB,L1XHQ

XPH3R908QB,L1XHQ Toshiba Semiconductor and Storage

XPH3R908QB_datasheet_en_20251107.pdf?did=166307&prodName=XPH3R908QB
Hersteller: Toshiba Semiconductor and Storage
Description: 80V 3.9MOHM N-CH MOSFET SOP ADVA
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 600µA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.36 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Lieferzeit: 10-14 Tag (e)
Mindestmenge: 5000 Stücke
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Technische Details XPH3R908QB,L1XHQ Toshiba Semiconductor and Storage

Description: 80V 3.9MOHM N-CH MOSFET SOP ADVA, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Ta), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 40A, 10V, Power Dissipation (Max): 3W (Ta), 132W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 600µA, Supplier Device Package: 8-SOP Advance (5x5), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 10 V, Qualification: AEC-Q101.

Weitere Produktangebote XPH3R908QB,L1XHQ nach Preis ab 1.29 EUR bis 4.94 EUR

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XPH3R908QB,L1XHQ XPH3R908QB,L1XHQ Toshiba XPH3R908QB_datasheet_en_20251107.pdf?did=166307&prodName=XPH3R908QB MOSFETs POWER MOSFET TRANSISTOR SOP Advance(WF) PD=132W F=1MHZ
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.69 EUR
10+2.31 EUR
100+2.07 EUR
500+1.65 EUR
1000+1.61 EUR
2500+1.56 EUR
5000+1.29 EUR
Im Einkaufswagen  Stück im Wert von  UAH
XPH3R908QB,L1XHQ XPH3R908QB,L1XHQ Toshiba Semiconductor and Storage XPH3R908QB_datasheet_en_20251107.pdf?did=166307&prodName=XPH3R908QB Description: 80V 3.9MOHM N-CH MOSFET SOP ADVA
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 600µA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.94 EUR
10+3.18 EUR
50+2.42 EUR
100+2.18 EUR
500+1.74 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
XPH3R908QB,L1XHQ XPH3R908QB_datasheet_en_20251107.pdf?did=166307&prodName=XPH3R908QB
XPH3R908QB,L1XHQ
Hersteller: Toshiba
MOSFETs POWER MOSFET TRANSISTOR SOP Advance(WF) PD=132W F=1MHZ
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+4.69 EUR
10+2.31 EUR
100+2.07 EUR
500+1.65 EUR
1000+1.61 EUR
2500+1.56 EUR
5000+1.29 EUR
Im Einkaufswagen  Stück im Wert von  UAH
XPH3R908QB,L1XHQ XPH3R908QB_datasheet_en_20251107.pdf?did=166307&prodName=XPH3R908QB
XPH3R908QB,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: 80V 3.9MOHM N-CH MOSFET SOP ADVA
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 600µA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.94 EUR
10+3.18 EUR
50+2.42 EUR
100+2.18 EUR
500+1.74 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH