auf Bestellung 5000 Stücke:
Lieferzeit 212-216 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.04 EUR |
| 10+ | 2.52 EUR |
| 25+ | 2.34 EUR |
| 100+ | 1.90 EUR |
| 250+ | 1.78 EUR |
| 500+ | 1.54 EUR |
| 1000+ | 1.42 EUR |
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Technische Details XPHR7904PS,L1XHQ Toshiba
Description: 40V UMOS9-H SOP ADVANCE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Ta), Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V, Power Dissipation (Max): 3W (Ta), 170W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: 8-SOP Advance (5x5), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote XPHR7904PS,L1XHQ
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| XPHR7904PS,L1XHQ | Hersteller : Toshiba Semiconductor and Storage |
 Description: 40V UMOS9-H SOP ADVANCEPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Ta) Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V Power Dissipation (Max): 3W (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| XPHR7904PS,L1XHQ | Hersteller : Toshiba Semiconductor and Storage |
Description: 40V UMOS9-H SOP ADVANCE Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Ta) Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V Power Dissipation (Max): 3W (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |