Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > XPN3R804NC,L1XHQ
XPN3R804NC,L1XHQ

XPN3R804NC,L1XHQ Toshiba Semiconductor and Storage

XPN3R804NC_datasheet_en_20200624.pdf?did=68657&prodName=XPN3R804NC Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 40A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 10 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.77 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details XPN3R804NC,L1XHQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 40V 40A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V, Power Dissipation (Max): 840mW (Ta), 100W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 300µA, Supplier Device Package: 8-TSON Advance-WF (3.1x3.1), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 10 V.

Weitere Produktangebote XPN3R804NC,L1XHQ nach Preis ab 0.61 EUR bis 2.97 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
XPN3R804NC,L1XHQ XPN3R804NC,L1XHQ Hersteller : Toshiba XPN3R804NC_datasheet_en_20200624-1858444.pdf MOSFETs 100W 1MHz Automotive; AEC-Q101
auf Bestellung 8156 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.49 EUR
10+0.96 EUR
100+0.8 EUR
500+0.73 EUR
5000+0.62 EUR
10000+0.61 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
XPN3R804NC,L1XHQ XPN3R804NC,L1XHQ Hersteller : Toshiba Semiconductor and Storage XPN3R804NC_datasheet_en_20200624.pdf?did=68657&prodName=XPN3R804NC Description: MOSFET N-CH 40V 40A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 10 V
auf Bestellung 14885 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.97 EUR
10+1.88 EUR
100+1.27 EUR
500+1 EUR
1000+0.92 EUR
2000+0.84 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH