auf Bestellung 2254 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 10.67 EUR |
| 10+ | 8.98 EUR |
| 25+ | 8.47 EUR |
| 100+ | 7.25 EUR |
| 250+ | 6.85 EUR |
| 500+ | 6.69 EUR |
| 1500+ | 5.68 EUR |
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Technische Details XPQR3004PB,LXHQ Toshiba
Description: 40V U-MOS IX-H L-TOGL 0.3MOHM, Packaging: Tape & Reel (TR), Package / Case: 8-PowerBSFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 400A (Ta), Rds On (Max) @ Id, Vgs: 0.3mOhm @ 200A, 10V, Power Dissipation (Max): 750W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: L-TOGL™, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 295 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 26910 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote XPQR3004PB,LXHQ nach Preis ab 5.4 EUR bis 10.44 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| XPQR3004PB,LXHQ | Hersteller : Toshiba Semiconductor and Storage |
 Description: 40V U-MOS IX-H L-TOGL 0.3MOHMPackaging: Tape & Reel (TR) Package / Case: 8-PowerBSFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400A (Ta) Rds On (Max) @ Id, Vgs: 0.3mOhm @ 200A, 10V Power Dissipation (Max): 750W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: L-TOGL™ Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 295 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 26910 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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| XPQR3004PB,LXHQ | Hersteller : Toshiba Semiconductor and Storage |
Description: 40V U-MOS IX-H L-TOGL 0.3MOHM Packaging: Cut Tape (CT) Package / Case: 8-PowerBSFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400A (Ta) Rds On (Max) @ Id, Vgs: 0.3mOhm @ 200A, 10V Power Dissipation (Max): 750W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: L-TOGL™ Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 295 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 26910 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 4639 Stücke: Lieferzeit 10-14 Tag (e) |
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