YJD15N10A Yangjie Technology
Hersteller: Yangjie Technology
Description: TO-252 N 100V 15A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
| Anzahl | Preis |
|---|---|
| 2500+ | 0.33 EUR |
| 12500+ | 0.32 EUR |
| 25000+ | 0.3 EUR |
| 50000+ | 0.28 EUR |
| 100000+ | 0.25 EUR |
| 250000+ | 0.23 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details YJD15N10A Yangjie Technology
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 10.5A, Type of transistor: N-MOSFET, Technology: TRENCH POWER MV, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 10.5A, Pulsed drain current: 60A, Power dissipation: 22.5W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 0.12Ω, Mounting: SMD, Gate charge: 16nC, Kind of package: reel; tape, Kind of channel: enhancement.
Weitere Produktangebote YJD15N10A
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
YJD15N10A | YANGJIE TECHNOLOGY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 10.5A Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 100V Drain current: 10.5A Pulsed drain current: 60A Power dissipation: 22.5W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
| YJD15N10A |
![]() |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 10.5A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.5A
Pulsed drain current: 60A
Power dissipation: 22.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 10.5A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.5A
Pulsed drain current: 60A
Power dissipation: 22.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen
Stück im Wert von UAH



