YJD50N06A

YJD50N06A Yangjie Technology


Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 250000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.43 EUR
12500+0.41 EUR
25000+0.39 EUR
50000+0.36 EUR
100000+0.33 EUR
250000+0.30 EUR
Mindestbestellmenge: 2500
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Technische Details YJD50N06A Yangjie Technology

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 42A; 21.6W, Type of transistor: N-MOSFET, Technology: TRENCH POWER MV, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 42A, Pulsed drain current: 200A, Power dissipation: 21.6W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 17mΩ, Mounting: SMD, Gate charge: 51nC, Kind of package: reel; tape, Kind of channel: enhancement.

Weitere Produktangebote YJD50N06A

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
YJD50N06A Hersteller : YANGJIE TECHNOLOGY pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84FBB576D525A0D2&compId=YJD50N06A.pdf?ci_sign=81bc81ad1e2818181ab9073eb7f9f0a219162844 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 42A; 21.6W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Pulsed drain current: 200A
Power dissipation: 21.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhancement
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