YJD50N06A Yangjie Technology
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.43 EUR |
| 12500+ | 0.41 EUR |
| 25000+ | 0.39 EUR |
| 50000+ | 0.36 EUR |
| 100000+ | 0.33 EUR |
| 250000+ | 0.3 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details YJD50N06A Yangjie Technology
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 42A; 21.6W, Type of transistor: N-MOSFET, Technology: TRENCH POWER MV, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 42A, Pulsed drain current: 200A, Power dissipation: 21.6W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 17mΩ, Mounting: SMD, Gate charge: 51nC, Kind of package: reel; tape, Kind of channel: enhancement.
Weitere Produktangebote YJD50N06A
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| YJD50N06A | Hersteller : YANGJIE TECHNOLOGY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 42A; 21.6W Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 60V Drain current: 42A Pulsed drain current: 200A Power dissipation: 21.6W Case: TO252 Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: SMD Gate charge: 51nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |