YJL2301D Yangjie Technology
Hersteller: Yangjie Technology
Description: SOT-23 P -19V -3.8A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-23 P -19V -3.8A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 900000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.058 EUR |
| 15000+ | 0.056 EUR |
| 30000+ | 0.053 EUR |
| 60000+ | 0.049 EUR |
| 120000+ | 0.044 EUR |
| 300000+ | 0.04 EUR |
| 600000+ | 0.033 EUR |
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Technische Details YJL2301D Yangjie Technology
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -3A; 1W, Type of transistor: P-MOSFET, Technology: TRENCH POWER LV, Polarisation: unipolar, Drain-source voltage: -15V, Drain current: -3A, Pulsed drain current: -15A, Power dissipation: 1W, Case: SOT23, Gate-source voltage: ±10V, On-state resistance: 87mΩ, Mounting: SMD, Gate charge: 4.3nC, Kind of package: reel; tape, Kind of channel: enhancement.
Weitere Produktangebote YJL2301D nach Preis ab 0.039 EUR bis 0.039 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
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| YJL2301D | Hersteller : Yangjie Electronic Technology | P-Channel Enhancement Mode Field Effect Transistor |
auf Bestellung 999000 Stücke: Lieferzeit 14-21 Tag (e) |
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YJL2301D | Hersteller : YANGJIE TECHNOLOGY |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -3A; 1W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -15V Drain current: -3A Pulsed drain current: -15A Power dissipation: 1W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 87mΩ Mounting: SMD Gate charge: 4.3nC Kind of package: reel; tape Kind of channel: enhancement |
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