YJL2301G Yangjie Technology
Hersteller: Yangjie Technology
Description: SOT-23 P -19V -2A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-23 P -19V -2A Transistors F
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.042 EUR |
| 15000+ | 0.04 EUR |
| 30000+ | 0.037 EUR |
| 60000+ | 0.035 EUR |
| 120000+ | 0.032 EUR |
| 300000+ | 0.03 EUR |
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Technische Details YJL2301G Yangjie Technology
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -1.6A; 0.7W, Type of transistor: P-MOSFET, Technology: TRENCH POWER LV, Polarisation: unipolar, Drain-source voltage: -15V, Drain current: -1.6A, Pulsed drain current: -8A, Power dissipation: 0.7W, Case: SOT23, Gate-source voltage: ±10V, On-state resistance: 0.18Ω, Mounting: SMD, Gate charge: 3.9nC, Kind of package: reel; tape, Kind of channel: enhancement.
Weitere Produktangebote YJL2301G nach Preis ab 0.026 EUR bis 0.026 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
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| YJL2301G | Hersteller : Yangjie Electronic Technology | P-Channel Enhancement Mode Field Effect Transistor |
auf Bestellung 48000 Stücke: Lieferzeit 14-21 Tag (e) |
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YJL2301G | Hersteller : YANGJIE TECHNOLOGY |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -1.6A; 0.7W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -15V Drain current: -1.6A Pulsed drain current: -8A Power dissipation: 0.7W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 3.9nC Kind of package: reel; tape Kind of channel: enhancement |
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