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YJL2302A

YJL2302A Yangjie Technology

YJL2302A.pdf
Hersteller: Yangjie Technology
Description: SOT-23 N 20V 4.3A Transistors F
Part Status: Active
Packaging: Tape & Reel (TR)
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Technische Details YJL2302A Yangjie Technology

Description: N-CH MOSFET 20V 4.3A SOT-23-3L, Input Capacitance (Ciss) (Max) @ Vds: 602 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 1.25V @ 250µA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 27mOhm @ 4.3A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).

Weitere Produktangebote YJL2302A

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YJL2302A YJL2302A Yangzhou Yangjie Electronic Technology Co.,Ltd YJL2302A.pdf Description: N-CH MOSFET 20V 4.3A SOT-23-3L
Input Capacitance (Ciss) (Max) @ Vds: 602 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 4.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
YJL2302A YJL2302A Yangzhou Yangjie Electronic Technology Co.,Ltd YJL2302A.pdf Description: N-CH MOSFET 20V 4.3A SOT-23-3L
Input Capacitance (Ciss) (Max) @ Vds: 602 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 4.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
YJL2302A YJL2302A YANGJIE TECHNOLOGY YJL2302A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 3.5A; 1W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Pulsed drain current: 18A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 20 Stücke
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YJL2302A YJL2302A.pdf
YJL2302A
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 4.3A SOT-23-3L
Input Capacitance (Ciss) (Max) @ Vds: 602 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 4.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
YJL2302A YJL2302A.pdf
YJL2302A
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 4.3A SOT-23-3L
Input Capacitance (Ciss) (Max) @ Vds: 602 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 4.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
YJL2302A YJL2302A.pdf
YJL2302A
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 3.5A; 1W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Pulsed drain current: 18A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH