YJL2304A Yangzhou Yangjie Electronic Technology Co.,Ltd
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 3.6A SOT-23-3L
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Technische Details YJL2304A Yangzhou Yangjie Electronic Technology Co.,Ltd
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 2.9A; 1W, Type of transistor: N-MOSFET, Technology: TRENCH POWER LV, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 2.9A, Pulsed drain current: 15A, Power dissipation: 1W, Case: SOT23, Gate-source voltage: ±20V, On-state resistance: 52mΩ, Mounting: SMD, Gate charge: 4.2nC, Kind of package: reel; tape, Kind of channel: enhancement.
Weitere Produktangebote YJL2304A
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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YJL2304A | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 30V 3.6A SOT-23-3L |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
YJL2304A | YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 2.9A; 1W Type of transistor: N-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.9A Pulsed drain current: 15A Power dissipation: 1W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 52mΩ Mounting: SMD Gate charge: 4.2nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH |
| YJL2304A |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 30V 3.6A SOT-23-3L
Description: N-CH MOSFET 30V 3.6A SOT-23-3L
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| YJL2304A |
|
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 2.9A; 1W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.9A
Pulsed drain current: 15A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 2.9A; 1W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.9A
Pulsed drain current: 15A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen
Stück im Wert von UAH