YJS2301A Yangjie Technology
Hersteller: Yangjie Technology
Description: SOT-23-6L P -20V -3.7A Transist
Packaging: Tape & Reel (TR)
Part Status: Active
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.14 EUR |
| 15000+ | 0.13 EUR |
| 30000+ | 0.12 EUR |
| 60000+ | 0.12 EUR |
| 120000+ | 0.1 EUR |
| 300000+ | 0.096 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details YJS2301A Yangjie Technology
Category: Multi channel transistors, Description: Transistor: P-MOSFET x2; TRENCH POWER LV; unipolar; -20V; -3A, Type of transistor: P-MOSFET x2, Technology: TRENCH POWER LV, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -3A, Pulsed drain current: -16A, Power dissipation: 1.3W, Case: SOT23-6, Gate-source voltage: ±10V, On-state resistance: 95mΩ, Mounting: SMD, Gate charge: 4.3nC, Kind of package: reel; tape, Kind of channel: enhancement.
Weitere Produktangebote YJS2301A
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
YJS2301A | YANGJIE TECHNOLOGY |
 Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; TRENCH POWER LV; unipolar; -20V; -3A Type of transistor: P-MOSFET x2 Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -20V Drain current: -3A Pulsed drain current: -16A Power dissipation: 1.3W Case: SOT23-6 Gate-source voltage: ±10V On-state resistance: 95mΩ Mounting: SMD Gate charge: 4.3nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 770 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH |
| YJS2301A |
|
Hersteller: YANGJIE TECHNOLOGY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TRENCH POWER LV; unipolar; -20V; -3A
Type of transistor: P-MOSFET x2
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Pulsed drain current: -16A
Power dissipation: 1.3W
Case: SOT23-6
Gate-source voltage: ±10V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TRENCH POWER LV; unipolar; -20V; -3A
Type of transistor: P-MOSFET x2
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Pulsed drain current: -16A
Power dissipation: 1.3W
Case: SOT23-6
Gate-source voltage: ±10V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 770 Stücke:
Lieferzeit 14-21 Tag (e)