YJS4606A Yangjie Technology
Hersteller: Yangjie Technology
Description: SOP-8 N/P 30 -30V 6.0 -5.0A Tra
Packaging: Tape & Reel (TR)
Part Status: Active
| Anzahl | Privatkunde |
|---|---|
| 4000+ | 0.2 EUR |
| 20000+ | 0.19 EUR |
| 40000+ | 0.18 EUR |
| 80000+ | 0.17 EUR |
| 160000+ | 0.15 EUR |
| 400000+ | 0.14 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
4000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details YJS4606A Yangjie Technology
Category: Multi channel transistors, Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6/-5A; Idm: 24÷-20A; 2W, Case: SOP8, Mounting: SMD, Pulsed drain current: 24...-20A, Power dissipation: 2W, Gate charge: 5.2nC, Polarisation: unipolar, Drain current: 6/-5A, Kind of channel: enhancement, Drain-source voltage: 30/-30V, Type of transistor: N/P-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, On-state resistance: 29mΩ.
Weitere Produktangebote YJS4606A
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
YJS4606A | YANGJIE TECHNOLOGY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6/-5A; Idm: 24÷-20A; 2W Case: SOP8 Mounting: SMD Pulsed drain current: 24...-20A Power dissipation: 2W Gate charge: 5.2nC Polarisation: unipolar Drain current: 6/-5A Kind of channel: enhancement Drain-source voltage: 30/-30V Type of transistor: N/P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 29mΩ |
auf Bestellung 1617 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH |
| YJS4606A |
Hersteller: YANGJIE TECHNOLOGY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6/-5A; Idm: 24÷-20A; 2W
Case: SOP8
Mounting: SMD
Pulsed drain current: 24...-20A
Power dissipation: 2W
Gate charge: 5.2nC
Polarisation: unipolar
Drain current: 6/-5A
Kind of channel: enhancement
Drain-source voltage: 30/-30V
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 29mΩ
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6/-5A; Idm: 24÷-20A; 2W
Case: SOP8
Mounting: SMD
Pulsed drain current: 24...-20A
Power dissipation: 2W
Gate charge: 5.2nC
Polarisation: unipolar
Drain current: 6/-5A
Kind of channel: enhancement
Drain-source voltage: 30/-30V
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 29mΩ
auf Bestellung 1617 Stücke:
Lieferzeit 14-21 Tag (e)