YJS9435A Yangjie Technology
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
| Anzahl | Privatkunde |
|---|---|
| 4000+ | 0.17 EUR |
| 20000+ | 0.15 EUR |
| 40000+ | 0.14 EUR |
| 160000+ | 0.13 EUR |
| 400000+ | 0.12 EUR |
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Technische Details YJS9435A Yangjie Technology
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -4.1A; 2.5W, Type of transistor: P-MOSFET, Technology: TRENCH POWER LV, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -4.1A, Pulsed drain current: -20A, Power dissipation: 2.5W, Case: SOP8, Gate-source voltage: ±20V, On-state resistance: 75mΩ, Mounting: SMD, Gate charge: 6.8nC, Kind of package: reel; tape, Kind of channel: enhancement.
Weitere Produktangebote YJS9435A
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
YJS9435A | YANGJIE TECHNOLOGY |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -4.1A; 2.5W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.1A Pulsed drain current: -20A Power dissipation: 2.5W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 6.8nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
| YJS9435A |
|
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -4.1A; 2.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.1A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -4.1A; 2.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.1A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen
Stück im Wert von UAH