YJSD12N03A Yangjie Technology
auf Bestellung 400000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4000+ | 0.26 EUR |
| 20000+ | 0.25 EUR |
| 40000+ | 0.24 EUR |
| 80000+ | 0.22 EUR |
| 160000+ | 0.2 EUR |
| 400000+ | 0.18 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details YJSD12N03A Yangjie Technology
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; TRENCH POWER LV; unipolar; 30V; 9.6A, Type of transistor: N-MOSFET x2, Technology: TRENCH POWER LV, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 9.6A, Pulsed drain current: 50A, Power dissipation: 2.5W, Case: SOP8, Gate-source voltage: ±20V, On-state resistance: 15mΩ, Mounting: SMD, Gate charge: 23.6nC, Kind of package: reel; tape, Kind of channel: enhancement.
Weitere Produktangebote YJSD12N03A nach Preis ab 0.15 EUR bis 0.28 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
YJSD12N03A | Hersteller : YANGJIE TECHNOLOGY |
 Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; TRENCH POWER LV; unipolar; 30V; 9.6A Type of transistor: N-MOSFET x2 Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: 30V Drain current: 9.6A Pulsed drain current: 50A Power dissipation: 2.5W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 23.6nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 7730 Stücke: Lieferzeit 14-21 Tag (e) |
|