YJSD12N03A YANGJIE TECHNOLOGY
Hersteller: YANGJIE TECHNOLOGYCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; TRENCH POWER LV; unipolar; 30V; 9.6A
Type of transistor: N-MOSFET x2
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.6A
Pulsed drain current: 50A
Power dissipation: 2.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 23.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 5 Stücke
auf Bestellung 7475 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 275+ | 0.26 EUR |
| 380+ | 0.19 EUR |
| 435+ | 0.17 EUR |
| 500+ | 0.15 EUR |
| 8000+ | 0.14 EUR |
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Technische Details YJSD12N03A YANGJIE TECHNOLOGY
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; TRENCH POWER LV; unipolar; 30V; 9.6A, Type of transistor: N-MOSFET x2, Technology: TRENCH POWER LV, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 9.6A, Pulsed drain current: 50A, Power dissipation: 2.5W, Case: SOP8, Gate-source voltage: ±20V, On-state resistance: 15mΩ, Mounting: SMD, Gate charge: 23.6nC, Kind of package: reel; tape, Kind of channel: enhancement, Anzahl je Verpackung: 5 Stücke.
Weitere Produktangebote YJSD12N03A nach Preis ab 0.15 EUR bis 0.26 EUR
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YJSD12N03A | Hersteller : YANGJIE TECHNOLOGY |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; TRENCH POWER LV; unipolar; 30V; 9.6A Type of transistor: N-MOSFET x2 Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: 30V Drain current: 9.6A Pulsed drain current: 50A Power dissipation: 2.5W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 23.6nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 7475 Stücke: Lieferzeit 14-21 Tag (e) |
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YJSD12N03A | Hersteller : Yangjie Technology | Description: SOP-8 N 30V 12A Transistors FET |
auf Bestellung 400000 Stücke: Lieferzeit 10-14 Tag (e) |
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