YQ3LAM10DTR ROHM Semiconductor
| Anzahl | Preis |
|---|---|
| 2+ | 1.69 EUR |
| 10+ | 1.02 EUR |
| 100+ | 0.67 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.46 EUR |
| 3000+ | 0.35 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details YQ3LAM10DTR ROHM Semiconductor
Description: TRENCH MOS STRUCTURE, 100V, 3A, Packaging: Tape & Reel (TR), Package / Case: SOD-128, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 140pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: PMDTM, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A, Current - Reverse Leakage @ Vr: 30 µA @ 100 V.
Weitere Produktangebote YQ3LAM10DTR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
YQ3LAM10DTR | Hersteller : Rohm Semiconductor |
 Description: TRENCH MOS STRUCTURE, 100V, 3APackaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 140pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: PMDTM Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A Current - Reverse Leakage @ Vr: 30 µA @ 100 V |
Produkt ist nicht verfügbar |
|
|
|
YQ3LAM10DTR | Hersteller : Rohm Semiconductor |
Description: TRENCH MOS STRUCTURE, 100V, 3A Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 140pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: PMDTM Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A Current - Reverse Leakage @ Vr: 30 µA @ 100 V |
Produkt ist nicht verfügbar |