YQ5LAM10ETFTR ROHM Semiconductor
| Anzahl | Preis |
|---|---|
| 2+ | 2.13 EUR |
| 10+ | 1.35 EUR |
| 100+ | 0.89 EUR |
| 500+ | 0.7 EUR |
| 1000+ | 0.64 EUR |
| 3000+ | 0.58 EUR |
| 6000+ | 0.56 EUR |
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Technische Details YQ5LAM10ETFTR ROHM Semiconductor
Description: TRENCH MOS STRUCTURE, 100V, 5A, Packaging: Tape & Reel (TR), Package / Case: SOD-128, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 200pF @ 4V, 1MHz, Current - Average Rectified (Io): 5A, Supplier Device Package: PMDTM, Operating Temperature - Junction: 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 610 mV @ 5 A, Current - Reverse Leakage @ Vr: 50 µA @ 100 V, Qualification: AEC-Q101.
Weitere Produktangebote YQ5LAM10ETFTR nach Preis ab 0.71 EUR bis 2.53 EUR
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YQ5LAM10ETFTR | Hersteller : Rohm Semiconductor |
 Description: TRENCH MOS STRUCTURE, 100V, 5APackaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: PMDTM Operating Temperature - Junction: 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 610 mV @ 5 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V Qualification: AEC-Q101 |
auf Bestellung 2632 Stücke: Lieferzeit 10-14 Tag (e) |
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YQ5LAM10ETFTR | Hersteller : Rohm Semiconductor |
Description: TRENCH MOS STRUCTURE, 100V, 5A Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: PMDTM Operating Temperature - Junction: 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 610 mV @ 5 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V Qualification: AEC-Q101 |
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