ZTD09N50DE6QTA Diodes Incorporated
Hersteller: Diodes Incorporated
Description: TRANS 2NPN 50V 1A
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 215MHz
Supplier Device Package: SOT-26
Description: TRANS 2NPN 50V 1A
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 215MHz
Supplier Device Package: SOT-26
auf Bestellung 69000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.57 EUR |
6000+ | 0.54 EUR |
9000+ | 0.5 EUR |
30000+ | 0.49 EUR |
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Technische Details ZTD09N50DE6QTA Diodes Incorporated
Description: TRANS 2NPN 50V 1A, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 1.1W, Current - Collector (Ic) (Max): 1A, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A, Current - Collector Cutoff (Max): 10nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V, Frequency - Transition: 215MHz, Supplier Device Package: SOT-26.
Weitere Produktangebote ZTD09N50DE6QTA nach Preis ab 0.64 EUR bis 2.2 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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ZTD09N50DE6QTA | Hersteller : Diodes Incorporated |
Description: TRANS 2NPN 50V 1A Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.1W Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 215MHz Supplier Device Package: SOT-26 |
auf Bestellung 69900 Stücke: Lieferzeit 10-14 Tag (e) |
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ZTD09N50DE6QTA | Hersteller : Diodes Incorporated | Bipolar Transistors - BJT 50V Dual NPN Low Sat 1A 7V Vebo |
auf Bestellung 975 Stücke: Lieferzeit 14-28 Tag (e) |
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