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ZTX457STZ

ZTX457STZ Diodes Incorporated

ZTX457.pdf Hersteller: Diodes Incorporated
Bipolar Transistors - BJT NPN High Voltage
auf Bestellung 950 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
35+1.52 EUR
41+ 1.29 EUR
100+ 0.9 EUR
500+ 0.75 EUR
1000+ 0.63 EUR
2000+ 0.56 EUR
4000+ 0.53 EUR
Mindestbestellmenge: 35
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Technische Details ZTX457STZ Diodes Incorporated

Description: TRANS NPN 300V 0.5A E-LINE, Packaging: Tape & Box (TB), Package / Case: E-Line-3, Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V, Frequency - Transition: 75MHz, Supplier Device Package: E-Line (TO-92 compatible), Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 300 V, Power - Max: 1 W.

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ZTX457STZ ZTX457.pdf
auf Bestellung 2022 Stücke:
Lieferzeit 21-28 Tag (e)
ZTX457STZ ZTX457STZ Hersteller : Diodes Inc ztx457.pdf Trans GP BJT NPN 300V 0.5A 1000mW 3-Pin E-Line Box
Produkt ist nicht verfügbar
ZTX457STZ ZTX457STZ Hersteller : Diodes Zetex ztx457.pdf Trans GP BJT NPN 300V 0.5A 1000mW 3-Pin E-Line Box
Produkt ist nicht verfügbar
ZTX457STZ ZTX457STZ Hersteller : Diodes Incorporated ZTX457.pdf Description: TRANS NPN 300V 0.5A E-LINE
Packaging: Cut Tape (CT)
Package / Case: E-Line-3, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Frequency - Transition: 75MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
Produkt ist nicht verfügbar
ZTX457STZ ZTX457STZ Hersteller : Diodes Incorporated ZTX457.pdf Description: TRANS NPN 300V 0.5A E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Frequency - Transition: 75MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
Produkt ist nicht verfügbar