ZTX855STZ Diodes Incorporated
Hersteller: Diodes Incorporated
Description: TRANS NPN 150V 4A E-LINE
Power - Max: 1.2 W
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 90MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Tape & Box (TB)
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Technische Details ZTX855STZ Diodes Incorporated
Description: TRANS NPN 150V 4A E-LINE, Power - Max: 1.2 W, Voltage - Collector Emitter Breakdown (Max): 150 V, Current - Collector (Ic) (Max): 4 A, Supplier Device Package: E-Line (TO-92 compatible), Frequency - Transition: 90MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V, Current - Collector Cutoff (Max): 50nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A, Operating Temperature: -55°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: E-Line-3, Packaging: Tape & Box (TB).
Weitere Produktangebote ZTX855STZ
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
ZTX855STZ | Diodes Incorporated |
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| ZTX855STZ |
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Hersteller: Diodes Incorporated
Bipolar Transistors - BJT NPN Big Chip SELine
Bipolar Transistors - BJT NPN Big Chip SELine
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH


