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Technische Details ZVN2106ASTZ Diodes Zetex
Description: DIODES INC. - ZVN2106ASTZ - Leistungs-MOSFET, n-Kanal, 60 V, 450 mA, 2 ohm, E-Line, Durchsteckmontage, tariffCode: 85411000, Transistormontage: Durchsteckmontage, Drain-Source-Spannung Vds: 60V, rohsCompliant: YES, Dauer-Drainstrom Id: 450mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 2.4V, euEccn: NLR, Verlustleistung: 700mW, Bauform - Transistor: E-Line, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: No, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 2ohm, SVHC: No SVHC (25-Jun-2025).
Weitere Produktangebote ZVN2106ASTZ nach Preis ab 0.43 EUR bis 2.01 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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ZVN2106ASTZ | Diodes Zetex |
 Trans MOSFET N-CH 60V 0.45A 3-Pin E-Line T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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ZVN2106ASTZ | Diodes Zetex |
Trans MOSFET N-CH 60V 0.45A 3-Pin E-Line T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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ZVN2106ASTZ | Diodes Incorporated |
Description: MOSFET N-CH 60V 450MA E-LINE Packaging: Tape & Reel (TR) Package / Case: E-Line-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: E-Line (TO-92 compatible) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 18 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZVN2106ASTZ | DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.45A; 0.7W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.45A Power dissipation: 0.7W Case: TO92 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: THT Kind of package: bulk Kind of channel: enhancement |
auf Bestellung 1603 Stücke: Lieferzeit 14-21 Tag (e) |
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ZVN2106ASTZ | Diodes Incorporated |
MOSFETs N-Chnl 60V |
auf Bestellung 2436 Stücke: Lieferzeit 10-14 Tag (e) |
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ZVN2106ASTZ | Diodes Incorporated |
Description: MOSFET N-CH 60V 450MA E-LINE Packaging: Cut Tape (CT) Package / Case: E-Line-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: E-Line (TO-92 compatible) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 18 V |
auf Bestellung 10443 Stücke: Lieferzeit 10-14 Tag (e) |
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ZVN2106ASTZ | DIODES INC. |
Description: DIODES INC. - ZVN2106ASTZ - Leistungs-MOSFET, n-Kanal, 60 V, 450 mA, 2 ohm, E-Line, Durchsteckmontage tariffCode: 85411000 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 450mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.4V euEccn: NLR Verlustleistung: 700mW Bauform - Transistor: E-Line Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 2ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 1411 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| ZVN2106ASTZ |
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Hersteller: Diodes Zetex
Trans MOSFET N-CH 60V 0.45A 3-Pin E-Line T/R
Trans MOSFET N-CH 60V 0.45A 3-Pin E-Line T/R
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.48 EUR |
| ZVN2106ASTZ |
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Hersteller: Diodes Zetex
Trans MOSFET N-CH 60V 0.45A 3-Pin E-Line T/R
Trans MOSFET N-CH 60V 0.45A 3-Pin E-Line T/R
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.48 EUR |
| ZVN2106ASTZ |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 450MA E-LINE
Packaging: Tape & Reel (TR)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 18 V
Description: MOSFET N-CH 60V 450MA E-LINE
Packaging: Tape & Reel (TR)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 18 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.51 EUR |
| 4000+ | 0.48 EUR |
| 6000+ | 0.45 EUR |
| 10000+ | 0.43 EUR |
| ZVN2106ASTZ |
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Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.45A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.45A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.45A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.45A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
auf Bestellung 1603 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 66+ | 1.3 EUR |
| 102+ | 0.83 EUR |
| 154+ | 0.56 EUR |
| 250+ | 0.5 EUR |
| ZVN2106ASTZ |
|
Hersteller: Diodes Incorporated
MOSFETs N-Chnl 60V
MOSFETs N-Chnl 60V
auf Bestellung 2436 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.01 EUR |
| 10+ | 1.26 EUR |
| 100+ | 0.83 EUR |
| 500+ | 0.64 EUR |
| 1000+ | 0.58 EUR |
| 2000+ | 0.51 EUR |
| 4000+ | 0.45 EUR |
| ZVN2106ASTZ |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 450MA E-LINE
Packaging: Cut Tape (CT)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 18 V
Description: MOSFET N-CH 60V 450MA E-LINE
Packaging: Cut Tape (CT)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 18 V
auf Bestellung 10443 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 2.01 EUR |
| 17+ | 1.27 EUR |
| 100+ | 0.83 EUR |
| 500+ | 0.64 EUR |
| 1000+ | 0.58 EUR |
| ZVN2106ASTZ |
|
Hersteller: DIODES INC.
Description: DIODES INC. - ZVN2106ASTZ - Leistungs-MOSFET, n-Kanal, 60 V, 450 mA, 2 ohm, E-Line, Durchsteckmontage
tariffCode: 85411000
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 450mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.4V
euEccn: NLR
Verlustleistung: 700mW
Bauform - Transistor: E-Line
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 2ohm
SVHC: No SVHC (25-Jun-2025)
Description: DIODES INC. - ZVN2106ASTZ - Leistungs-MOSFET, n-Kanal, 60 V, 450 mA, 2 ohm, E-Line, Durchsteckmontage
tariffCode: 85411000
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 450mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.4V
euEccn: NLR
Verlustleistung: 700mW
Bauform - Transistor: E-Line
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 2ohm
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 1411 Stücke:
Lieferzeit 14-21 Tag (e)