ZVN2106GTA Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 710MA SOT223
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 18 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 710mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 1000+ | 0.54 EUR |
| 2000+ | 0.46 EUR |
| 3000+ | 0.45 EUR |
| 7000+ | 0.44 EUR |
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Technische Details ZVN2106GTA Diodes Incorporated
Description: MOSFET N-CH 60V 710MA SOT223, Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 18 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SOT-223-3, Vgs(th) (Max) @ Id: 2.4V @ 1mA, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 710mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).
Weitere Produktangebote ZVN2106GTA nach Preis ab 0.46 EUR bis 1.97 EUR
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ZVN2106GTA | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.7A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.7A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 417 Stücke: Lieferzeit 14-21 Tag (e) |
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ZVN2106GTA | Diodes Incorporated |
Description: MOSFET N-CH 60V 710MA SOT223 Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 18 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: SOT-223-3 Vgs(th) (Max) @ Id: 2.4V @ 1mA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 710mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
auf Bestellung 362373 Stücke: Lieferzeit 10-14 Tag (e) |
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ZVN2106GTA | Diodes Incorporated |
MOSFETs N-Chnl 60V T/R |
auf Bestellung 2447 Stücke: Lieferzeit 10-14 Tag (e) |
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| ZVN2106GTA |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.7A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.7A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.7A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.7A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 417 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 54+ | 1.33 EUR |
| 82+ | 0.88 EUR |
| 110+ | 0.65 EUR |
| 125+ | 0.58 EUR |
| ZVN2106GTA |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 710MA SOT223
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 18 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 710mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 710MA SOT223
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 18 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 710mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 362373 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.65 EUR |
| 15+ | 1.23 EUR |
| 100+ | 0.81 EUR |
| 500+ | 0.63 EUR |
| ZVN2106GTA |
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Hersteller: Diodes Incorporated
MOSFETs N-Chnl 60V T/R
MOSFETs N-Chnl 60V T/R
auf Bestellung 2447 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.97 EUR |
| 10+ | 1.22 EUR |
| 100+ | 0.81 EUR |
| 500+ | 0.64 EUR |
| 1000+ | 0.56 EUR |
| 2000+ | 0.49 EUR |
| 5000+ | 0.46 EUR |