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Technische Details ZVN4206AVSTZ Diodes Zetex
Description: DIODES INC. - ZVN4206AVSTZ - Leistungs-MOSFET, n-Kanal, 60 V, 600 mA, 1 ohm, E-Line, Durchsteckmontage, tariffCode: 85411000, Transistormontage: Durchsteckmontage, Drain-Source-Spannung Vds: 60V, rohsCompliant: YES, Dauer-Drainstrom Id: 600mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3V, euEccn: NLR, Verlustleistung: 700mW, Bauform - Transistor: E-Line, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 1ohm, SVHC: No SVHC (15-Jan-2018).
Weitere Produktangebote ZVN4206AVSTZ nach Preis ab 0.46 EUR bis 2.5 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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ZVN4206AVSTZ | Diodes Incorporated |
 Description: MOSFET N-CH 60V 600MA E-LINEPackaging: Tape & Box (TB) Package / Case: E-Line-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: E-Line (TO-92 compatible) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V |
auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZVN4206AVSTZ | DIODES INCORPORATED |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; Idm: 8A; 0.7W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.6A Power dissipation: 0.7W Case: TO92 Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: THT Kind of package: Ammo Pack Kind of channel: enhancement Pulsed drain current: 8A |
auf Bestellung 748 Stücke: Lieferzeit 14-21 Tag (e) |
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ZVN4206AVSTZ | Diodes Incorporated |
MOSFETs Avalanche |
auf Bestellung 2793 Stücke: Lieferzeit 10-14 Tag (e) |
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ZVN4206AVSTZ | Diodes Incorporated |
Description: MOSFET N-CH 60V 600MA E-LINE Packaging: Cut Tape (CT) Package / Case: E-Line-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: E-Line (TO-92 compatible) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V |
auf Bestellung 22701 Stücke: Lieferzeit 10-14 Tag (e) |
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ZVN4206AVSTZ | DIODES INC. |
Description: DIODES INC. - ZVN4206AVSTZ - Leistungs-MOSFET, n-Kanal, 60 V, 600 mA, 1 ohm, E-Line, Durchsteckmontage tariffCode: 85411000 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 600mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 700mW Bauform - Transistor: E-Line Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1ohm SVHC: No SVHC (15-Jan-2018) |
auf Bestellung 3578 Stücke: Lieferzeit 14-21 Tag (e) |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 600MA E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Description: MOSFET N-CH 60V 600MA E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.67 EUR |
| 4000+ | 0.61 EUR |
| 6000+ | 0.58 EUR |
| 10000+ | 0.56 EUR |
| 14000+ | 0.54 EUR |
| 20000+ | 0.52 EUR |
| ZVN4206AVSTZ |
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Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; Idm: 8A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.6A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
Pulsed drain current: 8A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; Idm: 8A; 0.7W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.6A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
Pulsed drain current: 8A
auf Bestellung 748 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 62+ | 1.38 EUR |
| 105+ | 0.82 EUR |
| 148+ | 0.58 EUR |
| 200+ | 0.52 EUR |
| 250+ | 0.51 EUR |
| 500+ | 0.46 EUR |
| ZVN4206AVSTZ |
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Hersteller: Diodes Incorporated
MOSFETs Avalanche
MOSFETs Avalanche
auf Bestellung 2793 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.03 EUR |
| 10+ | 1.17 EUR |
| 100+ | 0.83 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.61 EUR |
| 2000+ | 0.5 EUR |
| 4000+ | 0.48 EUR |
| ZVN4206AVSTZ |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 600MA E-LINE
Packaging: Cut Tape (CT)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Description: MOSFET N-CH 60V 600MA E-LINE
Packaging: Cut Tape (CT)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
auf Bestellung 22701 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.45 EUR |
| 14+ | 1.55 EUR |
| 100+ | 1.02 EUR |
| 500+ | 0.8 EUR |
| 1000+ | 0.73 EUR |
| ZVN4206AVSTZ |
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Hersteller: DIODES INC.
Description: DIODES INC. - ZVN4206AVSTZ - Leistungs-MOSFET, n-Kanal, 60 V, 600 mA, 1 ohm, E-Line, Durchsteckmontage
tariffCode: 85411000
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 600mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 700mW
Bauform - Transistor: E-Line
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 1ohm
SVHC: No SVHC (15-Jan-2018)
Description: DIODES INC. - ZVN4206AVSTZ - Leistungs-MOSFET, n-Kanal, 60 V, 600 mA, 1 ohm, E-Line, Durchsteckmontage
tariffCode: 85411000
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 600mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 700mW
Bauform - Transistor: E-Line
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 1ohm
SVHC: No SVHC (15-Jan-2018)
auf Bestellung 3578 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 2.5 EUR |
| 156+ | 1.5 EUR |
| 231+ | 0.93 EUR |
| 500+ | 0.74 EUR |
| 1000+ | 0.65 EUR |