ZVN4210GTA Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 800MA SOT223
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Power Dissipation (Max): 2W (Ta)
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Technische Details ZVN4210GTA Diodes Incorporated
Description: MOSFET N-CH 100V 800MA SOT223, Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: SOT-223-3, Vgs(th) (Max) @ Id: 2.4V @ 1mA, Power Dissipation (Max): 2W (Ta).
Weitere Produktangebote ZVN4210GTA nach Preis ab 0.56 EUR bis 2.45 EUR
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ZVN4210GTA | Diodes Incorporated |
MOSFETs N-Chnl 100V |
auf Bestellung 1237 Stücke: Lieferzeit 10-14 Tag (e) |
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ZVN4210GTA | Diodes Incorporated |
Description: MOSFET N-CH 100V 800MA SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: SOT-223-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V |
auf Bestellung 2590 Stücke: Lieferzeit 10-14 Tag (e) |
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auf Bestellung 45000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| ZVN4210GTA |
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Hersteller: Diodes Incorporated
MOSFETs N-Chnl 100V
MOSFETs N-Chnl 100V
auf Bestellung 1237 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.9 EUR |
| 10+ | 1.27 EUR |
| 100+ | 0.77 EUR |
| 500+ | 0.7 EUR |
| 1000+ | 0.63 EUR |
| 2000+ | 0.57 EUR |
| 5000+ | 0.56 EUR |
| ZVN4210GTA |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 800MA SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Description: MOSFET N-CH 100V 800MA SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
auf Bestellung 2590 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.45 EUR |
| 12+ | 1.55 EUR |
| 100+ | 1.03 EUR |
| 500+ | 0.81 EUR |
| ZVN4210GTA |
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auf Bestellung 45000 Stücke:
Lieferzeit 21-28 Tag (e)