ZVN4310A Diodes Incorporated


ZVN4310A.pdf
Hersteller: Diodes Incorporated
MOSFETs N-Chnl 100V
auf Bestellung 2876 Stücke:
Lieferzeit 10-14 Tag (e)
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2+1.65 EUR
10+1.19 EUR
100+1.09 EUR
500+1.02 EUR
4000+0.94 EUR
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Technische Details ZVN4310A Diodes Incorporated

Description: MOSFET N-CH 100V 900MA TO92-3, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: TO-92, Vgs(th) (Max) @ Id: 3V @ 1mA, Power Dissipation (Max): 850mW (Ta), Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 900mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Packaging: Bulk.

Weitere Produktangebote ZVN4310A nach Preis ab 0.91 EUR bis 3.24 EUR

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ZVN4310A ZVN4310A Diodes Incorporated ZVN4310A.pdf Description: MOSFET N-CH 100V 900MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-92
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 850mW (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
auf Bestellung 39710 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.24 EUR
10+2.08 EUR
100+1.41 EUR
500+1.12 EUR
1000+1.03 EUR
4000+0.91 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ZVN4310A ZVN4310A.pdf
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 900MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-92
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 850mW (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
auf Bestellung 39710 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.24 EUR
10+2.08 EUR
100+1.41 EUR
500+1.12 EUR
1000+1.03 EUR
4000+0.91 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH