ZVNL120GTA Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 200V 320MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Produktrezensionen
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Technische Details ZVNL120GTA Diodes Incorporated
Description: DIODES INC. - ZVNL120GTA - Leistungs-MOSFET, n-Kanal, 200 V, 320 mA, 10 ohm, SOT-223, Oberflächenmontage, tariffCode: 85411000, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 200V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 320mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 1 - unbegrenzt, Gate-Source-Schwellenspannung, max.: 1.5V, Verlustleistung: 2W, SVHC: Lead (25-Jun-2025), Bauform - Transistor: SOT-223, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 5V, Drain-Source-Durchgangswiderstand: 10ohm.
Weitere Produktangebote ZVNL120GTA nach Preis ab 0.58 EUR bis 2.06 EUR
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ZVNL120GTA | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 0.32A; Idm: 2A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 0.32A Pulsed drain current: 2A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 325 Stücke: Lieferzeit 14-21 Tag (e) |
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ZVNL120GTA | Diodes Incorporated |
MOSFETs N-Chnl 200V |
auf Bestellung 1080 Stücke: Lieferzeit 10-14 Tag (e) |
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ZVNL120GTA | Diodes Incorporated |
Description: MOSFET N-CH 200V 320MA SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V |
auf Bestellung 2293 Stücke: Lieferzeit 10-14 Tag (e) |
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ZVNL120GTA | DIODES INC. |
Description: DIODES INC. - ZVNL120GTA - Leistungs-MOSFET, n-Kanal, 200 V, 320 mA, 10 ohm, SOT-223, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 200V rohsCompliant: Y-EX Dauer-Drainstrom Id: 320mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 1.5V Verlustleistung: 2W SVHC: Lead (25-Jun-2025) Bauform - Transistor: SOT-223 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 5V Drain-Source-Durchgangswiderstand: 10ohm |
auf Bestellung 274 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.32A; Idm: 2A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.32A
Pulsed drain current: 2A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.32A; Idm: 2A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.32A
Pulsed drain current: 2A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 325 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 46+ | 1.56 EUR |
| 72+ | 1.01 EUR |
| 109+ | 0.66 EUR |
| 250+ | 0.58 EUR |
| ZVNL120GTA |
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Hersteller: Diodes Incorporated
MOSFETs N-Chnl 200V
MOSFETs N-Chnl 200V
auf Bestellung 1080 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.94 EUR |
| 10+ | 1.28 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.62 EUR |
| 2000+ | 0.58 EUR |
| ZVNL120GTA |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 200V 320MA SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Description: MOSFET N-CH 200V 320MA SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
auf Bestellung 2293 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.06 EUR |
| 14+ | 1.3 EUR |
| 100+ | 0.86 EUR |
| 500+ | 0.67 EUR |
| ZVNL120GTA |
|
Hersteller: DIODES INC.
Description: DIODES INC. - ZVNL120GTA - Leistungs-MOSFET, n-Kanal, 200 V, 320 mA, 10 ohm, SOT-223, Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 200V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 320mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1.5V
Verlustleistung: 2W
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: SOT-223
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 5V
Drain-Source-Durchgangswiderstand: 10ohm
Description: DIODES INC. - ZVNL120GTA - Leistungs-MOSFET, n-Kanal, 200 V, 320 mA, 10 ohm, SOT-223, Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 200V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 320mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1.5V
Verlustleistung: 2W
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: SOT-223
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 5V
Drain-Source-Durchgangswiderstand: 10ohm
auf Bestellung 274 Stücke:
Lieferzeit 14-21 Tag (e)