ZVNL120GTA Diodes Zetex
| Anzahl | Privatkunde |
|---|---|
| 147+ | 1.21 EUR |
| 162+ | 1.08 EUR |
| 198+ | 0.87 EUR |
| 250+ | 0.84 EUR |
| 500+ | 0.71 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
147 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details ZVNL120GTA Diodes Zetex
Description: DIODES INC. - ZVNL120GTA - Leistungs-MOSFET, n-Kanal, 200 V, 320 mA, 10 ohm, SOT-223, Oberflächenmontage, tariffCode: 85411000, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 200V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 320mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: N, MSL: MSL 1 - unbegrenzt, Gate-Source-Schwellenspannung, max.: 1.5V, Verlustleistung: 2W, SVHC: Lead (04-Feb-2026), Bauform - Transistor: SOT-223, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 5V, Drain-Source-Durchgangswiderstand: 10ohm.
Weitere Produktangebote ZVNL120GTA nach Preis ab 0.43 EUR bis 3.19 EUR
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ZVNL120GTA | Diodes Zetex |
 Trans MOSFET N-CH 200V 0.32A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 850 Stücke: Lieferzeit 14-21 Tag (e) |
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ZVNL120GTA | Diodes Incorporated |
MOSFETs N-Chnl 200V |
auf Bestellung 1080 Stücke: Lieferzeit 10-14 Tag (e) |
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ZVNL120GTA | Diodes Incorporated |
Description: MOSFET N-CH 200V 320MA SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V |
auf Bestellung 440 Stücke: Lieferzeit 10-14 Tag (e) |
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ZVNL120GTA | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 0.32A; Idm: 2A; 2W; SOT223 Mounting: SMD Drain-source voltage: 200V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOT223 On-state resistance: 10Ω Pulsed drain current: 2A Power dissipation: 2W Polarisation: unipolar Drain current: 0.32A Kind of channel: enhancement |
auf Bestellung 285 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| ZVNL120GTA |
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Hersteller: Diodes Zetex
Trans MOSFET N-CH 200V 0.32A 4-Pin(3+Tab) SOT-223 T/R
Trans MOSFET N-CH 200V 0.32A 4-Pin(3+Tab) SOT-223 T/R
auf Bestellung 850 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 136+ | 1.31 EUR |
| 147+ | 1.17 EUR |
| 162+ | 1.02 EUR |
| 198+ | 0.8 EUR |
| 250+ | 0.76 EUR |
| 500+ | 0.43 EUR |
| ZVNL120GTA |
|
Hersteller: Diodes Incorporated
MOSFETs N-Chnl 200V
MOSFETs N-Chnl 200V
auf Bestellung 1080 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.31 EUR |
| 10+ | 1.52 EUR |
| 100+ | 1.07 EUR |
| 500+ | 0.84 EUR |
| 1000+ | 0.74 EUR |
| 2000+ | 0.69 EUR |
| ZVNL120GTA |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 200V 320MA SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Description: MOSFET N-CH 200V 320MA SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
auf Bestellung 440 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.19 EUR |
| 11+ | 2.01 EUR |
| 25+ | 1.7 EUR |
| 50+ | 1.51 EUR |
| 100+ | 1.34 EUR |
| ZVNL120GTA |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.32A; Idm: 2A; 2W; SOT223
Mounting: SMD
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT223
On-state resistance: 10Ω
Pulsed drain current: 2A
Power dissipation: 2W
Polarisation: unipolar
Drain current: 0.32A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.32A; Idm: 2A; 2W; SOT223
Mounting: SMD
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT223
On-state resistance: 10Ω
Pulsed drain current: 2A
Power dissipation: 2W
Polarisation: unipolar
Drain current: 0.32A
Kind of channel: enhancement
auf Bestellung 285 Stücke:
Lieferzeit 14-21 Tag (e)