ZX5T851A
Hersteller:
auf Bestellung 80 Stücke:
Lieferzeit 21-28 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details ZX5T851A
Description: TRANS NPN 60V 4.5A TO92-3, Power - Max: 1 W, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 4.5 A, Supplier Device Package: E-Line (TO-92 compatible), Frequency - Transition: 130MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V, Current - Collector Cutoff (Max): 20nA, Vce Saturation (Max) @ Ib, Ic: 210mV @ 200mA, 5A, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: E-Line-3, Packaging: Bulk.
Weitere Produktangebote ZX5T851A
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
ZX5T851A | Diodes Incorporated |
Description: TRANS NPN 60V 4.5A TO92-3 Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 4.5 A Supplier Device Package: E-Line (TO-92 compatible) Frequency - Transition: 130MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V Current - Collector Cutoff (Max): 20nA Vce Saturation (Max) @ Ib, Ic: 210mV @ 200mA, 5A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: E-Line-3 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
ZX5T851A | Diodes Incorporated |
Description: TRANS NPN 60V 4.5A TO92-3 Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 4.5 A Supplier Device Package: E-Line (TO-92 compatible) Frequency - Transition: 130MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V Current - Collector Cutoff (Max): 20nA Vce Saturation (Max) @ Ib, Ic: 210mV @ 200mA, 5A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: E-Line-3 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
ZX5T851A | Diodes Incorporated |
Bipolar Transistors - BJT NPN 60V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| ZX5T851A |
|
Hersteller: Diodes Incorporated
Description: TRANS NPN 60V 4.5A TO92-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 4.5 A
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Current - Collector Cutoff (Max): 20nA
Vce Saturation (Max) @ Ib, Ic: 210mV @ 200mA, 5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Bulk
Description: TRANS NPN 60V 4.5A TO92-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 4.5 A
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Current - Collector Cutoff (Max): 20nA
Vce Saturation (Max) @ Ib, Ic: 210mV @ 200mA, 5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZX5T851A |
|
Hersteller: Diodes Incorporated
Description: TRANS NPN 60V 4.5A TO92-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 4.5 A
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Current - Collector Cutoff (Max): 20nA
Vce Saturation (Max) @ Ib, Ic: 210mV @ 200mA, 5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Bulk
Description: TRANS NPN 60V 4.5A TO92-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 4.5 A
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Current - Collector Cutoff (Max): 20nA
Vce Saturation (Max) @ Ib, Ic: 210mV @ 200mA, 5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ZX5T851A |
|
Hersteller: Diodes Incorporated
Bipolar Transistors - BJT NPN 60V
Bipolar Transistors - BJT NPN 60V
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH