ZXM64P02XTA Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 20V 3.5A 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-MSOP
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 15 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 1.11 EUR |
| 2000+ | 1.04 EUR |
| 5000+ | 0.99 EUR |
| 10000+ | 0.95 EUR |
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Technische Details ZXM64P02XTA Diodes Incorporated
Description: MOSFET P-CH 20V 3.5A 8MSOP, Packaging: Tape & Reel (TR), Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 90mOhm @ 2.4A, 4.5V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 700mV @ 250µA (Min), Supplier Device Package: 8-MSOP, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 15 V.
Weitere Produktangebote ZXM64P02XTA nach Preis ab 0.87 EUR bis 2.45 EUR
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ZXM64P02XTA | Hersteller : Diodes Incorporated |
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ZXM64P02XTA | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 20V 3.5A 8MSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 2.4A, 4.5V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: 8-MSOP Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 15 V |
auf Bestellung 13470 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXM64P02XTA | Hersteller : Diodes Inc |
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| ZXM64P02XTA | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -19A; 1.1W; MSOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.8A Pulsed drain current: -19A Power dissipation: 1.1W Case: MSOP8 Gate-source voltage: ±12V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 6.9nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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| ZXM64P02XTA | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -19A; 1.1W; MSOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.8A Pulsed drain current: -19A Power dissipation: 1.1W Case: MSOP8 Gate-source voltage: ±12V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 6.9nC Kind of package: reel; tape Kind of channel: enhanced |
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