ZXMN10A25K Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 4.2A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 859 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 17.16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.11W (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Technische Details ZXMN10A25K Diodes Incorporated
Description: MOSFET N-CH 100V 4.2A TO252-3, Input Capacitance (Ciss) (Max) @ Vds: 859 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 17.16 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: TO-252-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2.11W (Ta), Rds On (Max) @ Id, Vgs: 125mOhm @ 2.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote ZXMN10A25K
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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ZXMN10A25K | Diodes Incorporated |
Description: MOSFET N-CH 100V 4.2A TO252-3 Input Capacitance (Ciss) (Max) @ Vds: 859 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 17.16 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: TO-252-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.11W (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 2.9A, 10V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| ZXMN10A25K |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 4.2A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 859 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 17.16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.11W (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 4.2A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 859 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 17.16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.11W (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH