ZXMN2B01FTA Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 2.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.24 EUR |
| 6000+ | 0.21 EUR |
| 9000+ | 0.2 EUR |
| 15000+ | 0.19 EUR |
| 21000+ | 0.18 EUR |
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Technische Details ZXMN2B01FTA Diodes Incorporated
Description: MOSFET N-CH 20V 2.1A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 2.4A, 4.5V, Power Dissipation (Max): 625mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V.
Weitere Produktangebote ZXMN2B01FTA nach Preis ab 0.19 EUR bis 1.09 EUR
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ZXMN2B01FTA | Diodes Zetex |
Trans MOSFET N-CH 20V 2.1A 3-Pin SOT-23 T/R |
auf Bestellung 2022 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMN2B01FTA | Diodes Zetex |
Trans MOSFET N-CH 20V 2.1A 3-Pin SOT-23 T/R |
auf Bestellung 2022 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMN2B01FTA | Diodes Incorporated |
Description: MOSFET N-CH 20V 2.1A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2.4A, 4.5V Power Dissipation (Max): 625mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V |
auf Bestellung 61570 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN2B01FTA | Diodes Incorporated |
MOSFETs 20V N-Channel MOSFET w/low gate drive cap |
auf Bestellung 18309 Stücke: Lieferzeit 10-14 Tag (e) |
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| ZXMN2B01FTA |
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Hersteller: Diodes Zetex
Trans MOSFET N-CH 20V 2.1A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 20V 2.1A 3-Pin SOT-23 T/R
auf Bestellung 2022 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 332+ | 0.52 EUR |
| 456+ | 0.38 EUR |
| 460+ | 0.37 EUR |
| 594+ | 0.27 EUR |
| 1000+ | 0.23 EUR |
| ZXMN2B01FTA |
![]() |
Hersteller: Diodes Zetex
Trans MOSFET N-CH 20V 2.1A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 20V 2.1A 3-Pin SOT-23 T/R
auf Bestellung 2022 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 277+ | 0.63 EUR |
| 330+ | 0.51 EUR |
| 332+ | 0.49 EUR |
| 456+ | 0.35 EUR |
| 460+ | 0.32 EUR |
| 594+ | 0.24 EUR |
| 1000+ | 0.19 EUR |
| ZXMN2B01FTA |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 2.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
Description: MOSFET N-CH 20V 2.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
auf Bestellung 61570 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 1.07 EUR |
| 32+ | 0.65 EUR |
| 100+ | 0.42 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.29 EUR |
| ZXMN2B01FTA |
![]() |
Hersteller: Diodes Incorporated
MOSFETs 20V N-Channel MOSFET w/low gate drive cap
MOSFETs 20V N-Channel MOSFET w/low gate drive cap
auf Bestellung 18309 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 1.09 EUR |
| 10+ | 0.69 EUR |
| 100+ | 0.44 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.32 EUR |


