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ZXMN3A01E6TA

ZXMN3A01E6TA Diodes Incorporated


ZXMN3A01E6.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 2.4A SOT-23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 25 V
auf Bestellung 270000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.34 EUR
6000+0.32 EUR
9000+0.30 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details ZXMN3A01E6TA Diodes Incorporated

Description: MOSFET N-CH 30V 2.4A SOT-23-6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 25 V.

Weitere Produktangebote ZXMN3A01E6TA nach Preis ab 0.36 EUR bis 0.88 EUR

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ZXMN3A01E6TA ZXMN3A01E6TA Hersteller : Diodes Incorporated ZXMN3A01E6.pdf MOSFETs 30V N-Chnl UMOS
auf Bestellung 7976 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.87 EUR
10+0.75 EUR
100+0.54 EUR
500+0.46 EUR
1000+0.40 EUR
3000+0.36 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
ZXMN3A01E6TA ZXMN3A01E6TA Hersteller : Diodes Incorporated ZXMN3A01E6.pdf Description: MOSFET N-CH 30V 2.4A SOT-23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 25 V
auf Bestellung 282397 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.88 EUR
23+0.77 EUR
100+0.53 EUR
500+0.44 EUR
1000+0.38 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
ZXMN3A01E6TA ZXMN3A01E6TA Hersteller : Diodes Inc 35792231929354528zxmn3a01e6.pdf Trans MOSFET N-CH 30V 2.4A 6-Pin SOT-23 T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
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ZXMN3A01E6TA ZXMN3A01E6.pdf
auf Bestellung 3200 Stücke:
Lieferzeit 21-28 Tag (e)
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