ZXMN3A04DN8TC
Hersteller: auf Bestellung 50000 Stücke:
Lieferzeit 21-28 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details ZXMN3A04DN8TC
Description: MOSFET 2N-CH 30V 6.5A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.81W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6.5A, Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 15V, Rds On (Max) @ Id, Vgs: 20mOhm @ 12.6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 36.8nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: 8-SO.
Weitere Produktangebote ZXMN3A04DN8TC
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
ZXMN3A04DN8TC | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 30V 6.5A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.81W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 12.6A, 10V Gate Charge (Qg) (Max) @ Vgs: 36.8nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SO |
Produkt ist nicht verfügbar |