ZXMN3A04DN8TC
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Lieferzeit 21-28 Tag (e)
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Technische Details ZXMN3A04DN8TC
Description: MOSFET 2N-CH 30V 6.5A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 6.5A, Drain to Source Voltage (Vdss): 30V, Power - Max: 1.81W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 36.8nC @ 10V, Rds On (Max) @ Id, Vgs: 20mOhm @ 12.6A, 10V.
Weitere Produktangebote ZXMN3A04DN8TC
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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ZXMN3A04DN8TC | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 6.5A 8SO Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 15V Current - Continuous Drain (Id) @ 25°C: 6.5A Drain to Source Voltage (Vdss): 30V Power - Max: 1.81W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1V @ 250µA (Min) FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 36.8nC @ 10V Rds On (Max) @ Id, Vgs: 20mOhm @ 12.6A, 10V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| ZXMN3A04DN8TC |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 6.5A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.81W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 36.8nC @ 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 12.6A, 10V
Description: MOSFET 2N-CH 30V 6.5A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.81W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 36.8nC @ 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 12.6A, 10V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH