ZXMN3AMCTA Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 3.7A 8DFN
Power - Max: 1.7W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: DFN3020B-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Drain to Source Voltage (Vdss): 30V
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Technische Details ZXMN3AMCTA Diodes Incorporated
Description: MOSFET 2N-CH 30V 3.7A 8DFN, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: DFN3020B-8, Vgs(th) (Max) @ Id: 3V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V, Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), Drain to Source Voltage (Vdss): 30V, Power - Max: 1.7W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-WDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote ZXMN3AMCTA
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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ZXMN3AMCTA | Diodes Incorporated |
MOSFET 30V DUAL N-CH ENH 20V VGS 3.7 IDS |
auf Bestellung 625 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| ZXMN3AMCTA |
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Hersteller: Diodes Incorporated
MOSFET 30V DUAL N-CH ENH 20V VGS 3.7 IDS
MOSFET 30V DUAL N-CH ENH 20V VGS 3.7 IDS
auf Bestellung 625 Stücke:
Lieferzeit 10-14 Tag (e)