auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.26 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details ZXMN3B01FTA Diodes Zetex
Description: MOSFET N-CH 30V 1.7A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), Rds On (Max) @ Id, Vgs: 150mOhm @ 1.7A, 4.5V, Power Dissipation (Max): 625mW (Ta), Vgs(th) (Max) @ Id: 700mV @ 250µA (Min), Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 2.93 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 15 V.
Weitere Produktangebote ZXMN3B01FTA nach Preis ab 0.26 EUR bis 1.07 EUR
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ZXMN3B01FTA | Hersteller : Diodes Zetex |
 Trans MOSFET N-CH 30V 1.7A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMN3B01FTA | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 1.7A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 1.7A, 4.5V Power Dissipation (Max): 625mW (Ta) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.93 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 15 V |
auf Bestellung 537000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN3B01FTA | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 1.7A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 1.7A, 4.5V Power Dissipation (Max): 625mW (Ta) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.93 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 15 V |
auf Bestellung 538991 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN3B01FTA | Hersteller : Diodes Incorporated |
MOSFETs 30V N Chnl UMOS |
auf Bestellung 4572 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN3B01FTA | Hersteller : Diodes Inc |
Trans MOSFET N-CH 30V 2A 3-Pin SOT-23 T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMN3B01FTA | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 30V 1.7A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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ZXMN3B01FTA | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 30V 1.7A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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ZXMN3B01FTA | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 30V 1.7A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |