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ZXMN6A07FQTA

ZXMN6A07FQTA Diodes Incorporated

ZXMN6A07F.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 1.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.8A, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 166 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6723000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.41 EUR
6000+ 0.39 EUR
9000+ 0.36 EUR
Mindestbestellmenge: 3000
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Technische Details ZXMN6A07FQTA Diodes Incorporated

Description: MOSFET N-CH 60V 1.2A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), Rds On (Max) @ Id, Vgs: 250mOhm @ 1.8A, 10V, Power Dissipation (Max): 625mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 166 pF @ 40 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote ZXMN6A07FQTA nach Preis ab 0.4 EUR bis 1.23 EUR

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ZXMN6A07FQTA ZXMN6A07FQTA Hersteller : Diodes Incorporated ZXMN6A07F.pdf Description: MOSFET N-CH 60V 1.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.8A, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 166 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 6726318 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
22+1.22 EUR
25+ 1.05 EUR
100+ 0.73 EUR
500+ 0.57 EUR
1000+ 0.46 EUR
Mindestbestellmenge: 22
ZXMN6A07FQTA ZXMN6A07FQTA Hersteller : Diodes Incorporated DIOD_S_A0001069527_1-2541815.pdf MOSFET MOSFET BVDSS: 41V~60V SOT23 T&R 3K
auf Bestellung 3799 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
43+1.23 EUR
50+ 1.05 EUR
100+ 0.74 EUR
500+ 0.57 EUR
1000+ 0.47 EUR
3000+ 0.4 EUR
Mindestbestellmenge: 43
ZXMN6A07FQTA ZXMN6A07FQTA Hersteller : Diodes Inc zxmn6a07f.pdf Trans MOSFET N-CH 60V 1.2A Automotive 3-Pin SOT-23 T/R
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ZXMN6A07FQTA ZXMN6A07FQTA Hersteller : Diodes Inc zxmn6a07f.pdf Trans MOSFET N-CH 60V 1.2A Automotive 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar